Structure of HfO2 films epitaxially grown on GaAs(001)

標題:	Structure of HfO2 films epitaxially grown on GaAs(001)
作者:	Hsu, C. -H. Chang, P. Lee, W. C. Yang, Z. K. Lee, Y. J. Hong, M. Kwo, J. Huang, C. M. Lee, H. Y. 光電工程學系 Department of Photonics
公開日期:	18-九月-2006
摘要:	High-quality HfO2 films of technologically important thickness ranging from 1.8 to 17 nm have been grown epitaxially on GaAs (001) by molecular beam epitaxy. Thorough structural and morphological investigations were carried out by x-ray scattering and high-resolution transmission electron microscopy. The films exhibit an atomically sharp interface with the substrate and are of a monoclinic phase with predominant (001)-plane epitaxy between the HfO2 films and GaAs, in spite of a large lattice mismatch of > 8.5%.
URI:	http://dx.doi.org/10.1063/1.2356895 http://hdl.handle.net/11536/11766
ISSN:	0003-6951
DOI:	10.1063/1.2356895
期刊:	APPLIED PHYSICS LETTERS
Volume:	89
Issue:	12
結束頁:
顯示於類別：	期刊論文

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