Optical characterization of isoelectronic ZnSe1-xOx semiconductors

doi:10.1016/j.jcrysgro.2010.10.106

標題:	Optical characterization of isoelectronic ZnSe1-xOx semiconductors
作者:	Lin, Y. C. Chung, H. L. Ku, J. T. Chen, C. Y. Chien, K. F. Fan, W. C. Lee, L. Chyi, J. I. Chou, W. C. Chang, W. H. Chen, W. K. 電機學院 College of Electrical and Computer Engineering
關鍵字:	Molecular beam epitaxy;Alloys;Oxides;Zinc compounds;Semiconducting II-VI materials;Semiconducting ternary compounds
公開日期:	15-May-2011
摘要:	We have studied the temperature dependence of the band gap and the decay dynamics of isoelectronic ZnSe1-xOx (x=0-0.053) semiconductors, using photoluminescence (PL) and time-resolved PL spectroscopy. The temperature dependence of the band gap of ZnSe1-xOx decreases with the increase in 0 concentration. The Kohlrausch law is in good agreement with the O-induced complex decay profiles. As temperature increases, the mechanism of carrier decay undergoes a complicated change from trapped to free excitons. These findings are consistent with the temperature dependence of the stretching exponent beta. (C) 2010 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.jcrysgro.2010.10.106 http://hdl.handle.net/11536/150333
ISSN:	0022-0248
DOI:	10.1016/j.jcrysgro.2010.10.106
期刊:	JOURNAL OF CRYSTAL GROWTH
Volume:	323
起始頁:	122
結束頁:	126
Appears in Collections:	Articles