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dc.contributor.authorRay, S. C.en_US
dc.contributor.authorHsueh, H. C.en_US
dc.contributor.authorWu, C. H.en_US
dc.contributor.authorPao, C. W.en_US
dc.contributor.authorAsokan, K.en_US
dc.contributor.authorLiu, M. T.en_US
dc.contributor.authorTsai, H. M.en_US
dc.contributor.authorChuang, C. H.en_US
dc.contributor.authorPong, W. F.en_US
dc.contributor.authorChiou, J. W.en_US
dc.contributor.authorTsai, M. -H.en_US
dc.contributor.authorLee, J. M.en_US
dc.contributor.authorJang, L. Y.en_US
dc.contributor.authorChen, J. M.en_US
dc.contributor.authorLee, J. F.en_US
dc.date.accessioned2019-04-02T05:58:56Z-
dc.date.available2019-04-02T05:58:56Z-
dc.date.issued2011-07-25en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3607475en_US
dc.identifier.urihttp://hdl.handle.net/11536/150350-
dc.description.abstractThis work investigates local atomic and electronic structures of PbZr0.52Ti0.48O3 (PZT) thin films with < 001 >, < 101 >, and < 111 > orientations using extended x-ray absorption fine structure (EXAFS) and x-ray absorption near-edge structure (XANES) spectroscopy with theta = 0 degrees and 70 degrees incident angles. The EXAFS result indicates that the < 001 >-oriented PZT film has a polarization dominantly along the c-axis, while both < 101 >- and < 111 >-oriented PZT films have a dominant in-ab-plane polarization. The hysteresis-loop measurements show that the < 001 >-oriented PZT film has a much larger coercive field than those of other two PZT films, which indicates that the double-well potential along the c-axis is much deeper than that in the ab-plane. (C) 2011 American Institute of Physics. [doi:10.1063/1.3607475]en_US
dc.language.isoen_USen_US
dc.titleLoycal atomic and electronic structures and ferroelectric properties of PbZr0.52Ti0.48O3: An x-ray absorption studyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3607475en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume99en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000293475500055en_US
dc.citation.woscount9en_US
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