完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHsin, Cheng-Lunen_US
dc.contributor.authorLee, Wei-Fanen_US
dc.contributor.authorHuang, Chi-Teen_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorChen, Lih-Juannen_US
dc.date.accessioned2019-04-02T05:59:07Z-
dc.date.available2019-04-02T05:59:07Z-
dc.date.issued2011-10-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl202463wen_US
dc.identifier.urihttp://hdl.handle.net/11536/150387-
dc.description.abstractIn2Se3 is an essential phase change material and CuInSe2 is the fundamental basis of the copper-indium-gallium-diselenide (CIGS) solar energy material. In this paper, we demonstrate the feasibility to transform the phase change material to the solar energy material via the solid state reaction. The In2Se3 nanobelts (NBs) were synthesized via the vapor-liquid-solid mechanism. The chemical composition and the optical properties were investigated by energy dispersive spectroscopy, X-ray photoelectron spectroscopy, and reflectance and photoluminescence spectra. In the in situ observation of the solid state reaction with Cu to form the CuInSe2 NBs with ultrahigh vacuum transmission electron microscopy, we observed the In2Se3/CuInSe2 transformation at atomic scale in real time. The progression of the atomic layer at the interface provided the pertinent information on the kinetic mechanism. In2Se3/CuInSe2 nano-heterostructures were also obtained in the present investigation. The approach to the CIGS nanosolar cell was also proposed. This study shall be beneficial in the development of high-performance nanowire solar cells and nanodevices with In2Se3/CuInSe2 nano-heterostructures.en_US
dc.language.isoen_USen_US
dc.subjectIn2Se3en_US
dc.subjectCuInSe2en_US
dc.subjectin situ TEMen_US
dc.subjectsolid state reactionsen_US
dc.subjectnano-heterostructuresen_US
dc.titleGrowth of CuInSe2 and In2Se3/CuInSe2 Nano-Heterostructures through Solid State Reactionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl202463wen_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume11en_US
dc.citation.spage4348en_US
dc.citation.epage4351en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000295667000056en_US
dc.citation.woscount38en_US
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