Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

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DC 欄位	值	語言
dc.contributor.author	Chen, C. W.	en_US
dc.contributor.author	Hung, S. C.	en_US
dc.contributor.author	Lee, C. H.	en_US
dc.contributor.author	Tun, C. J.	en_US
dc.contributor.author	Kuo, C. H.	en_US
dc.contributor.author	Yang, M. D.	en_US
dc.contributor.author	Yeh, C. W.	en_US
dc.contributor.author	Wu, C. H.	en_US
dc.contributor.author	Chi, G. C.	en_US
dc.date.accessioned	2014-12-08T15:21:11Z	-
dc.date.available	2014-12-08T15:21:11Z	-
dc.date.issued	2011-12-01	en_US
dc.identifier.issn	2159-3930	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15038	-
dc.description.abstract	Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO(2)(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V(f)) of 6V with a series resistance of 2.2 x 10(5) Omega. (C) 2011 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure	en_US
dc.type	Article	en_US
dc.identifier.journal	OPTICAL MATERIALS EXPRESS	en_US
dc.citation.volume	1	en_US
dc.citation.issue	8	en_US
dc.citation.spage	1555	en_US
dc.citation.epage	1560	en_US
dc.contributor.department	照明與能源光電研究所	zh_TW
dc.contributor.department	Institute of Lighting and Energy Photonics	en_US
dc.identifier.wosnumber	WOS:000299050200020	-
dc.citation.woscount	7	-
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