完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChiang, Che-Yangen_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorWang, Chin-Teen_US
dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorHsu, Heng-Shouen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2019-04-02T05:59:39Z-
dc.date.available2019-04-02T05:59:39Z-
dc.date.issued2011-10-01en_US
dc.identifier.issn1882-0778en_US
dc.identifier.urihttp://dx.doi.org/10.1143/APEX.4.104105en_US
dc.identifier.urihttp://hdl.handle.net/11536/150395-
dc.description.abstractThis study fabricated a 150 nm In0.6Ga0.4As metamorphic high-electron-mobility transistor (mHEMT) device with flip-chip packaging. The packaged device exhibited favorable DC characteristics with I-DS = 350 mA/mm and a transconductance of 600 mS/mm at V-DS = 0.5V. A maximum available gain (MAG) of 6.5 dB at 60 GHz was achieved with 10 mW DC power consumption. A two-stage gain block was designed and fabricated. The gain block exhibited a small signal gain of 9 dB at 60 GHz with only 20 mW DC power consumption. Such superior performance is comparable to the mainstream submicron complimentary metal-oxide-semiconductor (CMOS) technology with lower power consumption. (C) 2011 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleV-Band Flip-Chip Assembled Gain Block Using In0.6Ga0.4As Metamorphic High-Electron-Mobility Transistor Technologyen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/APEX.4.104105en_US
dc.identifier.journalAPPLIED PHYSICS EXPRESSen_US
dc.citation.volume4en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000296083900018en_US
dc.citation.woscount1en_US
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