標題: Flip-Chip Packaging of In0.6Ga0.4As MHEMT Device on Low-Cost Organic Substrate for W-Band Applications
作者: Lim, Wee Chin
Wang, Chin-Te
Kuo, Chien-I
Hsu, Li-Han
Tsai, Szu-Ping
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2010
摘要: A discrete low noise In0.6Ga0.4As MHEMT device with 150 nm gate length was flip-chip assembled on the low-cost RO3210 organic substrate for wireless communication applications. The measured DC characteristics were very similar before and after flip-chip assembly. The flip-chip packaged MHEMT device showed a high drain current density of 516 mA/mm and a maximum transconductance of 576 mS/mm at a V-DS of 0.8 V. The insertion gain of the flip-chip packaged device was decayed less than 2 dB up to 100 GHz as compared to the data of bare die. Moreover, the measured minimum noise figure was less than 2 dB as measured at V-DS of 0.7 V and V-GS of -0.7 V in the frequency range from 20 to 64 GHz for the device after flip-chip assembly. The excellent performance of the flip-chip packaged MHEMT device demonstrates the feasibility of using low cost organic substrate for high frequency applications up to W band.
URI: http://hdl.handle.net/11536/20997
http://dx.doi.org/10.1149/1.3485616
ISBN: 978-1-56677-832-9
ISSN: 1938-5862
DOI: 10.1149/1.3485616
期刊: STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52)
Volume: 33
Issue: 13
起始頁: 171
結束頁: 176
顯示於類別:會議論文


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