標題: | Flip-Chip Packaging of In0.6Ga0.4As MHEMT Device on Low-Cost Organic Substrate for W-Band Applications |
作者: | Lim, Wee Chin Wang, Chin-Te Kuo, Chien-I Hsu, Li-Han Tsai, Szu-Ping Chang, Edward Yi 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2010 |
摘要: | A discrete low noise In0.6Ga0.4As MHEMT device with 150 nm gate length was flip-chip assembled on the low-cost RO3210 organic substrate for wireless communication applications. The measured DC characteristics were very similar before and after flip-chip assembly. The flip-chip packaged MHEMT device showed a high drain current density of 516 mA/mm and a maximum transconductance of 576 mS/mm at a V-DS of 0.8 V. The insertion gain of the flip-chip packaged device was decayed less than 2 dB up to 100 GHz as compared to the data of bare die. Moreover, the measured minimum noise figure was less than 2 dB as measured at V-DS of 0.7 V and V-GS of -0.7 V in the frequency range from 20 to 64 GHz for the device after flip-chip assembly. The excellent performance of the flip-chip packaged MHEMT device demonstrates the feasibility of using low cost organic substrate for high frequency applications up to W band. |
URI: | http://hdl.handle.net/11536/20997 http://dx.doi.org/10.1149/1.3485616 |
ISBN: | 978-1-56677-832-9 |
ISSN: | 1938-5862 |
DOI: | 10.1149/1.3485616 |
期刊: | STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52) |
Volume: | 33 |
Issue: | 13 |
起始頁: | 171 |
結束頁: | 176 |
顯示於類別: | 會議論文 |