標題: | An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications |
作者: | Wang, Chin-Te Kuo, Chien-, I Lim, Wee-Chin Hsu, Li-Han Hsu, Heng-Tung Miyamoto, Yasuyuki Chang, Edward Yi Tsai, Szu-Ping Chiu, Yu-Sheng 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | InxGa1-xAs-channel;HEMTs;Flip-chip |
公開日期: | 1-一月-2010 |
摘要: | The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I-DS = 425 mA/mm and high g(m) = 970 mS/mm at V-DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band. |
URI: | http://hdl.handle.net/11536/150518 |
ISSN: | 1092-8669 |
期刊: | 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) |
顯示於類別: | 會議論文 |