標題: An 80 nm In0.7Ga0.3As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications
作者: Wang, Chin-Te
Kuo, Chien-, I
Lim, Wee-Chin
Hsu, Li-Han
Hsu, Heng-Tung
Miyamoto, Yasuyuki
Chang, Edward Yi
Tsai, Szu-Ping
Chiu, Yu-Sheng
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: InxGa1-xAs-channel;HEMTs;Flip-chip
公開日期: 1-一月-2010
摘要: The fabrication process of an 80 nm In0.7Ga0.3As MHEMT device with flip-chip packaging on Al2O3 substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I-DS = 425 mA/mm and high g(m) = 970 mS/mm at V-DS = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NFmin)below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In0.7Ga0.3As MHEMT device for low noise applications at W-band.
URI: http://hdl.handle.net/11536/150518
ISSN: 1092-8669
期刊: 2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)
顯示於類別:會議論文