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dc.contributor.authorLien, An-Shaoen_US
dc.contributor.authorWang, L. Y.en_US
dc.contributor.authorChu, C. S.en_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2019-04-03T06:35:38Z-
dc.date.available2019-04-03T06:35:38Z-
dc.date.issued2011-10-17en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.84.155432en_US
dc.identifier.urihttp://hdl.handle.net/11536/150401-
dc.description.abstractTemporal universal conductance fluctuations (TUCF's) are observed in RuO2 nanowires at cryogenic temperatures. The fluctuations persist up to very high T similar to 10 K. Their root-mean-square magnitudes increase with decreasing T, reaching similar to 0.2e(2)/h at T less than or similar to 2 K. These fluctuations are shown to originate from scattering of conduction electrons with rich amounts of mobile defects in artificially synthesized metal oxide nanowires. TUCF characteristics in both one-dimensional saturated and unsaturated regimes are identified and explained in terms of current theories. Furthermore, the TUCF's as a probe for the characteristic time scales of the mobile defects (two-level systems) are discussed.en_US
dc.language.isoen_USen_US
dc.titleTemporal universal conductance fluctuations in RuO2 nanowires due to mobile defectsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.84.155432en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume84en_US
dc.citation.issue15en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000296288000002en_US
dc.citation.woscount10en_US
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