Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer

doi:10.1109/LED.2011.2168939

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chen, P. C.	en_US
dc.contributor.author	Wu, Y. H.	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2019-04-02T05:57:57Z	-
dc.date.available	2019-04-02T05:57:57Z	-
dc.date.issued	2011-12-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2011.2168939	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150416	-
dc.description.abstract	Using nanocrystal (nc) TiO2 and TaON buffer layer, the Ni/GeOx/nc-TiO2/TaON/TaN resistive random access memory (RRAM) showed forming-free resistive switching, self-compliance set/reset currents, excellent current distribution, low 0.7-pJ switching energy, and long 10(10) cycling endurance. The very long endurance in this novel RRAM may create new applications beyond Flash memory.	en_US
dc.language.iso	en_US	en_US
dc.subject	GeO2	en_US
dc.subject	hopping conduction	en_US
dc.subject	resistive random access memory (RRAM)	en_US
dc.subject	TiO2	en_US
dc.title	Long-Endurance Nanocrystal TiO2 Resistive Memory Using a TaON Buffer Layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2011.2168939	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	32	en_US
dc.citation.spage	1749	en_US
dc.citation.epage	1751	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000297352500034	en_US
dc.citation.woscount	20	en_US
顯示於類別：	期刊論文