Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure (vol 110, 053703, 2011)

Full metadata record

DC Field	Value	Language
dc.contributor.author	Chang, Yao-Feng	en_US
dc.contributor.author	Chang, Ting-Chang	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.date.accessioned	2019-04-02T05:57:54Z	-
dc.date.available	2019-04-02T05:57:54Z	-
dc.date.issued	2011-12-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3668129	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150427	-
dc.language.iso	en_US	en_US
dc.title	Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeOx transition layer of TiN/SiO2/FeOx/Fe structure (vol 110, 053703, 2011)	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.3668129	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	110	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000298254800179	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Articles