完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chu, Y. Y. | en_US |
dc.contributor.author | Liao, Y. F. | en_US |
dc.contributor.author | Tra, V. T. | en_US |
dc.contributor.author | Yang, J. C. | en_US |
dc.contributor.author | Liu, W. Z. | en_US |
dc.contributor.author | Chu, Y. H. | en_US |
dc.contributor.author | Lin, J. Y. | en_US |
dc.contributor.author | Huang, J. H. | en_US |
dc.contributor.author | Weinen, J. | en_US |
dc.contributor.author | Agrestini, S. | en_US |
dc.contributor.author | Tsuei, K. -D. | en_US |
dc.contributor.author | Huang, D. J. | en_US |
dc.date.accessioned | 2019-04-02T05:57:55Z | - |
dc.date.available | 2019-04-02T05:57:55Z | - |
dc.date.issued | 2011-12-26 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3672099 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150431 | - |
dc.description.abstract | We investigated the electronic reconstruction at the n-type LaAlO3/SrTiO3 interface with hard x-ray photoelectron spectroscopy (HAXPES) under grazing incidence. By exploiting the collapse of evanescent x-ray waves and the abrupt increase of x-ray absorption at the critical incidence angle, our HAXPES study reveals a 2% electronic reconstruction from Ti4+ to Ti3+ occurring near the interface. Such an electronic reconstruction also extends from the interface into SrTiO3 with a depth of about 48 angstrom (similar to 12 unit cells) and an estimated total charge transfer of similar to 0.24 electrons per two-dimensional unit cell. (C) 2011 American Institute of Physics. [doi:10.1063/1.3672099] | en_US |
dc.language.iso | en_US | en_US |
dc.title | Distribution of electronic reconstruction at the n-type LaAlO3/SrTiO3 interface revealed by hard x-ray photoemission spectroscopy | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3672099 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 99 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000298638500031 | en_US |
dc.citation.woscount | 7 | en_US |
顯示於類別: | 期刊論文 |