完整後設資料紀錄
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dc.contributor.authorChu, Y. Y.en_US
dc.contributor.authorLiao, Y. F.en_US
dc.contributor.authorTra, V. T.en_US
dc.contributor.authorYang, J. C.en_US
dc.contributor.authorLiu, W. Z.en_US
dc.contributor.authorChu, Y. H.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorHuang, J. H.en_US
dc.contributor.authorWeinen, J.en_US
dc.contributor.authorAgrestini, S.en_US
dc.contributor.authorTsuei, K. -D.en_US
dc.contributor.authorHuang, D. J.en_US
dc.date.accessioned2019-04-02T05:57:55Z-
dc.date.available2019-04-02T05:57:55Z-
dc.date.issued2011-12-26en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3672099en_US
dc.identifier.urihttp://hdl.handle.net/11536/150431-
dc.description.abstractWe investigated the electronic reconstruction at the n-type LaAlO3/SrTiO3 interface with hard x-ray photoelectron spectroscopy (HAXPES) under grazing incidence. By exploiting the collapse of evanescent x-ray waves and the abrupt increase of x-ray absorption at the critical incidence angle, our HAXPES study reveals a 2% electronic reconstruction from Ti4+ to Ti3+ occurring near the interface. Such an electronic reconstruction also extends from the interface into SrTiO3 with a depth of about 48 angstrom (similar to 12 unit cells) and an estimated total charge transfer of similar to 0.24 electrons per two-dimensional unit cell. (C) 2011 American Institute of Physics. [doi:10.1063/1.3672099]en_US
dc.language.isoen_USen_US
dc.titleDistribution of electronic reconstruction at the n-type LaAlO3/SrTiO3 interface revealed by hard x-ray photoemission spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3672099en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume99en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000298638500031en_US
dc.citation.woscount7en_US
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