標題: Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO2 fluid treatment
作者: Chang, Kuan-Chang
Tsai, Tsung-Ming
Chang, Ting-Chang
Syu, Yong-En
Wang, Chia-C.
Chuang, Siang-Lan
Li, Cheng-Hua
Gan, Der-Shin
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Fourier transform spectra;infrared spectra;nickel;power consumption;random-access storage;silicon compounds;X-ray photoelectron spectra
公開日期: 26-Dec-2011
摘要: In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO2 treatment. The defect of nickel-doped silicon oxide (Ni:SiOx) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiOx film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO2 for Ni:SiOx by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671991]
URI: http://dx.doi.org/10.1063/1.3671991
http://hdl.handle.net/11536/150432
ISSN: 0003-6951
DOI: 10.1063/1.3671991
期刊: APPLIED PHYSICS LETTERS
Volume: 99
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