標題: Reducing operation current of Ni-doped silicon oxide resistance random access memory by supercritical CO(2) fluid treatment
作者: Chang, Kuan-Chang
Tsai, Tsung-Ming
Chang, Ting-Chang
Syu, Yong-En
Wang, Chia-C.
Chuang, Siang-Lan
Li, Cheng-Hua
Gan, Der-Shin
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 26-十二月-2011
摘要: In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO(2) (SCCO(2)) fluids treatment. The power consumption and joule heating degradation of RRAM device can be improved greatly by SCCO(2) treatment. The defect of nickel-doped silicon oxide (Ni:SiO(x)) was passivated effectively by the supercritical fluid technology. The current conduction of high resistant state in post-treated Ni:SiO(x) film was transferred to Schottky emission from Frenkel-Pool due to the passivation effect. Additionally, we can demonstrate the passivation mechanism of SCCO(2) for Ni:SiO(x) by material analyses of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3671991]
URI: http://dx.doi.org/10.1063/1.3671991
http://hdl.handle.net/11536/15351
ISSN: 0003-6951
DOI: 10.1063/1.3671991
期刊: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 26
起始頁: 
結束頁: 
顯示於類別:期刊論文