High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent-Si3N4-Thickness Trapping Layer

Abstract

We made the MoN-[SiO2-LaAlO3]-[Ge-HfON]-[LaAlO3-SiO2]-Si charge-trapping (CT) Flash device with a record-thinnest 2.5-nm equivalent-Si3N4-thickness trapping layer, a large 4.4-V initial memory window, a 3.2-V ten-year extrapolated retention window at 125 degrees C, and a 3.6-V endurance window at 106 cycles, under very fast 100 mu s and low +/- 16-V program/erase pulses. These were achieved using Ge reaction with a HfON trapping layer for better CT and retention.