Title: High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent-Si3N4-Thickness Trapping Layer
Authors: Tsai, C. Y.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Charge-trapping (CT) Flash;Ge;HfON;LaAlO3;nonvolatile memory (NVM)
Issue Date: 1-Jan-2012
Abstract: We made the MoN-[SiO2-LaAlO3]-[Ge-HfON]-[LaAlO3-SiO2]-Si charge-trapping (CT) Flash device with a record-thinnest 2.5-nm equivalent-Si3N4-thickness trapping layer, a large 4.4-V initial memory window, a 3.2-V ten-year extrapolated retention window at 125 degrees C, and a 3.6-V endurance window at 106 cycles, under very fast 100 mu s and low +/- 16-V program/erase pulses. These were achieved using Ge reaction with a HfON trapping layer for better CT and retention.
URI: http://dx.doi.org/10.1109/TED.2011.2171970
http://hdl.handle.net/11536/150436
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2171970
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 59
Begin Page: 252
End Page: 254
Appears in Collections:Articles