Title: | High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent-Si3N4-Thickness Trapping Layer |
Authors: | Tsai, C. Y. Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | Charge-trapping (CT) Flash;Ge;HfON;LaAlO3;nonvolatile memory (NVM) |
Issue Date: | 1-Jan-2012 |
Abstract: | We made the MoN-[SiO2-LaAlO3]-[Ge-HfON]-[LaAlO3-SiO2]-Si charge-trapping (CT) Flash device with a record-thinnest 2.5-nm equivalent-Si3N4-thickness trapping layer, a large 4.4-V initial memory window, a 3.2-V ten-year extrapolated retention window at 125 degrees C, and a 3.6-V endurance window at 106 cycles, under very fast 100 mu s and low +/- 16-V program/erase pulses. These were achieved using Ge reaction with a HfON trapping layer for better CT and retention. |
URI: | http://dx.doi.org/10.1109/TED.2011.2171970 http://hdl.handle.net/11536/150436 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2011.2171970 |
Journal: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 59 |
Begin Page: | 252 |
End Page: | 254 |
Appears in Collections: | Articles |