標題: Graded index and randomly oriented core-shell silicon nanowires for broadband and wide angle antireflection
作者: Pignalos, P.
Lee, H.
Qiao, L.
Tseng, M.
Yi, Y.
光電工程研究所
Institute of EO Enginerring
公開日期: 1-九月-2011
摘要: Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60 degrees) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi:10.1063/1.3624838]
URI: http://dx.doi.org/10.1063/1.3624838
http://hdl.handle.net/11536/150453
ISSN: 2158-3226
DOI: 10.1063/1.3624838
期刊: AIP ADVANCES
Volume: 1
Issue: 3
起始頁: 0
結束頁: 0
顯示於類別:期刊論文


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