Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films

doi:10.1080/10584589808202061

標題:	Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
作者:	Tsai, MS Sun, SC Tseng, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	BST;annealing;oxygen vacancy;leakage current
公開日期:	1-Jan-1998
摘要:	The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient.
URI:	http://dx.doi.org/10.1080/10584589808202061 http://hdl.handle.net/11536/150470
ISSN:	1058-4587
DOI:	10.1080/10584589808202061
期刊:	INTEGRATED FERROELECTRICS
Volume:	21
起始頁:	173
結束頁:	183
Appears in Collections:	Articles