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dc.contributor.authorChao, Chia-Hsinen_US
dc.contributor.authorLai, Chun-Fengen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYeh, Wen-Yungen_US
dc.date.accessioned2019-04-02T06:04:47Z-
dc.date.available2019-04-02T06:04:47Z-
dc.date.issued2009-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150505-
dc.description.abstractThe optical effect of ITO current spreading layer on light extraction behavior of photonic crystal ultra-thin-film light-emitting diodes was investigated numerically. The slab-type ITO layer with half wavelength thickness behaves completely transparent to optical propertiesen_US
dc.language.isoen_USen_US
dc.subjectphotonic crystalen_US
dc.subjectlight-emitting diodeen_US
dc.subjectcurrent spreadingen_US
dc.titleLight Extraction from Photonic Crystal Ultra-thin GaN Light-Emitting Diodes with ITO Current Spreading Layeren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2009 LASERS & ELECTRO-OPTICS & THE PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1 AND 2en_US
dc.citation.spage521en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000277829300273en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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