Reliability Improvement of HfO2/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation Layer

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsieh, Chih-Ren	en_US
dc.contributor.author	Chen, Yung-Yu	en_US
dc.contributor.author	Chung, Jer-Fu	en_US
dc.contributor.author	Lou, Jen-Chung	en_US
dc.date.accessioned	2019-04-02T06:04:29Z	-
dc.date.available	2019-04-02T06:04:29Z	-
dc.date.issued	2009-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150523	-
dc.description.abstract	In this paper, the reliability of the fluorinated hafnium oxide (HfO2) gate dielectric using novel and CMOS compatible fluorinated silicate glass (FSG) process has been studied comprehensively for the first time. Due to dangling bonds and oxygen vacancies recovery by the fluorine atoms, higher transconductance, smaller stress-induced threshold voltage and interface state degradation are therefore obtained for the fluorinated HfO2/SiON gate stack.	en_US
dc.language.iso	en_US	en_US
dc.subject	fluorine	en_US
dc.subject	FSG	en_US
dc.subject	HfO2	en_US
dc.title	Reliability Improvement of HfO2/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation Layer	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009)	en_US
dc.citation.spage	240	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000289818000061	en_US
dc.citation.woscount	0	en_US
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