標題: | Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET |
作者: | Hsieh, Chih-Ren Chen, Yung-Yu Lou, Jen-Chung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Fluorinated silicate glass;HfO2;Threshold voltage instability |
公開日期: | 1-十一月-2010 |
摘要: | The superior characteristics of the fluorinated hafnium oxide/oxynitride (HfO2/SiON) gate dielectric are investigated comprehensively. Fluorine is incorporated into the gate dielectric through fluorinated silicate glass (FSG) passivation layer to form fluorinated HfO2/SiON dielectric. Fluorine incorporation has been proven to eliminate both bulk and interface trap densities due to Hf-F and Si-F bonds formation, which can strongly reduce trap generation as well as trap-assisted tunneling during subsequently constant voltage stress, and results in improved electrical characteristics and dielectric reliabilities. The results clearly indicate that the fluorinated HfO2/SiON gate dielectric using FSG passivation layer becomes a feasible technology for future ultrathin gate dielectrics applications. (C) 2010 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.mee.2010.02.010 http://hdl.handle.net/11536/150019 |
ISSN: | 0167-9317 |
DOI: | 10.1016/j.mee.2010.02.010 |
期刊: | MICROELECTRONIC ENGINEERING |
Volume: | 87 |
起始頁: | 2241 |
結束頁: | 2246 |
顯示於類別: | 期刊論文 |