Reliability Improvement of HfO2/SiON Gate Stacked nMOSFET using Fluorinated Silicate Glass Passivation Layer

Abstract

In this paper, the reliability of the fluorinated hafnium oxide (HfO2) gate dielectric using novel and CMOS compatible fluorinated silicate glass (FSG) process has been studied comprehensively for the first time. Due to dangling bonds and oxygen vacancies recovery by the fluorine atoms, higher transconductance, smaller stress-induced threshold voltage and interface state degradation are therefore obtained for the fluorinated HfO2/SiON gate stack.