標題: Effect of fluorinated silicate glass passivation layer on electrical characteristics and dielectric reliabilities for the HfO2/SiON gate stacked nMOSFET
作者: Hsieh, Chih-Ren
Chen, Yung-Yu
Lou, Jen-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Fluorinated silicate glass;HfO2;Threshold voltage instability
公開日期: 1-Nov-2010
摘要: The superior characteristics of the fluorinated hafnium oxide/oxynitride (HfO2/SiON) gate dielectric are investigated comprehensively. Fluorine is incorporated into the gate dielectric through fluorinated silicate glass (FSG) passivation layer to form fluorinated HfO2/SiON dielectric. Fluorine incorporation has been proven to eliminate both bulk and interface trap densities due to Hf-F and Si-F bonds formation, which can strongly reduce trap generation as well as trap-assisted tunneling during subsequently constant voltage stress, and results in improved electrical characteristics and dielectric reliabilities. The results clearly indicate that the fluorinated HfO2/SiON gate dielectric using FSG passivation layer becomes a feasible technology for future ultrathin gate dielectrics applications. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2010.02.010
http://hdl.handle.net/11536/150019
ISSN: 0167-9317
DOI: 10.1016/j.mee.2010.02.010
期刊: MICROELECTRONIC ENGINEERING
Volume: 87
起始頁: 2241
結束頁: 2246
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