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dc.contributor.authorChang, Li-Pinen_US
dc.contributor.authorHuang, Li-Chunen_US
dc.date.accessioned2019-04-02T06:04:31Z-
dc.date.available2019-04-02T06:04:31Z-
dc.date.issued2011-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150529-
dc.description.abstractMultilevel flash memory cells double or even triple storage density, producing affordable solid-state disks for end users. However, flash lifetime is becoming a critical issue in the popularity of solid-state disks. Wear-leveling methods can prevent flash-storage devices from prematurely retiring any portions of flash memory. The two practical challenges of wear-leveling design are implementation cost and tuning complexity. This study proposes a new wear-leveling design that features both simplicity and adaptiveness. This design requires no new data structures, but utilizes the intelligence available in sector-translating algorithms. Using an on-line tuning method, this design adaptively tunes itself to reach good balance between wear evenness and overhead. A series of trace-driven simulations show that the proposed design outperforms a competitive existing design in terms of wear evenness and overhead reduction. This study also presents a prototype that proves the feasibility of this wear-leveling design in real solid-state disks.en_US
dc.language.isoen_USen_US
dc.subjectFlash memoryen_US
dc.subjectwear levelingen_US
dc.subjectsolid-state disksen_US
dc.titleA Low-Cost Wear-Leveling Algorithm for Block-Mapping Solid-State Disksen_US
dc.typeProceedings Paperen_US
dc.identifier.journalLCTES 11: PROCEEDINGS OF THE ACM SIGPLAN/SIGBED 2011 CONFERENCE ON LANGUAGES, COMPILERS, TOOLS AND THEORY FOR EMBEDDED SYSTEMSen_US
dc.citation.spage31en_US
dc.citation.epage40en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000291895000004en_US
dc.citation.woscount7en_US
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