多通道固態硬碟上能自我調整的平均抹除演算法

Abstract

Multilevel flash memory cells double or even triple storage density, producing affordable solid-state disks for end users. Flash lifetime is becoming a critical issue in the popularity of solid-state disks. Wear-leveling methods can prevent flash- storage devices from prematurely retiring any portions of flash memory. In modern solid-state disks, wear leveling must consider wear evenness at the block level and channel level. In block-level, this study presents an wear-leveling for page-level mapping FTL. Because realistic workloads introduce uneven channel utilizations, block-level wear evenness does not guarantee the maximum device lifetime. This study introduces a channel-level wear-leveling strategy that aims at an eventually- even state of channel lifetimes. A series of trace-driven simulations show that the proposed design outperforms existing approaches in terms of wear evenness and overhead reduction.

Multilevel flash memory cells double or even triple storage density, producing affordable solid-state disks for end users. Flash lifetime is becoming a critical issue in the popularity of solid-state disks. Wear-leveling methods can prevent flash- storage devices from prematurely retiring any portions of flash memory. In modern solid-state disks, wear leveling must consider wear evenness at the block level and channel level. In block-level, this study presents an wear-leveling for page-level mapping FTL. Because realistic workloads introduce uneven channel utilizations, block-level wear evenness does not guarantee the maximum device lifetime. This study introduces a channel-level wear-leveling strategy that aims at an eventually- even state of channel lifetimes. A series of trace-driven simulations show that the proposed design outperforms existing approaches in terms of wear evenness and overhead reduction.