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dc.contributor.authorHuang, Huei-Minen_US
dc.contributor.authorHuang, Hung-Hsunen_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2019-04-02T06:04:34Z-
dc.date.available2019-04-02T06:04:34Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/150538-
dc.description.abstractThe a-plane AlxGa1-xN layers show abnormal optical polarization switching behavior. This phenomenon can be well characterized by the assumption of the lambertian-like radiation pattern and simulated by utilizing the 6 x 6 k . p model. (C) 2010 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleAbnormal polarization switching phenomenon in a-plane AlxGa1-xNen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000295612402116en_US
dc.citation.woscount0en_US
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