Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates

標題:	Reduction of Efficiency Droop in Semipolar (1(1)over-bar01) InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
作者:	Chiu, C. H. Lin, D. W. Lin, C. C. Li, Z. Y. Kuo, H. C. Lu, T. C. Wang, S. C. Liao, W. T. Tanikawa, T. Honda, Y. Yamaguchi, M. Sawaki, N. 光電系統研究所光電工程學系 Institute of Photonic System Department of Photonics
公開日期:	1-一月-2011
摘要:	The semi-polar InGaN-based LEDs exhibits low efficiency droop because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. (C) 2010 Optical Society of America
URI:	http://hdl.handle.net/11536/150539
ISSN:	2160-9020
期刊:	2011 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
顯示於類別：	會議論文