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dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorChen, Chu-Fengen_US
dc.contributor.authorLai, Chiung-Huien_US
dc.contributor.authorLiu, Chung-Hsienen_US
dc.contributor.authorWang, Yu-Binen_US
dc.contributor.authorWu, Chin-Ningen_US
dc.contributor.authorHsieh, Cheng-Tingen_US
dc.date.accessioned2019-04-02T06:04:34Z-
dc.date.available2019-04-02T06:04:34Z-
dc.date.issued2011-01-01en_US
dc.identifier.issn1938-5862en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.3640402en_US
dc.identifier.urihttp://hdl.handle.net/11536/150552-
dc.description.abstractReducing the width of a nano-wire increases its surface to volume ratio, increasing the sensitivity of its conductivity to charges on its surface. Our previous studies have shown that increasing the Ge fraction in Si1-xGex nano-wires improves their sensitivity as bio-sensing. In this work, an alpha-Si/SiGe core/shell nano-wire is successfully fabricated using side-wall spacer method. The maximum sensitivity of a nano-wire bio-sensor with an optimized alpha-Si/SiGe thickness ratio is investigated.en_US
dc.language.isoen_USen_US
dc.titleThe alpha-Si/SiGe core/shell nano-wire as highly sensitive bio-sensoren_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1149/1.3640402en_US
dc.identifier.journalNANOTECHNOLOGY (GENERAL) - 219TH ECS MEETINGen_US
dc.citation.volume35en_US
dc.citation.spage31en_US
dc.citation.epage42en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000300616400004en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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