標題: The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.
作者: Hong Quan Nguyen
Hai Dang Trinh
Yu, Hung Wei
Hsu, Ching Hsiang
Chung, Chen Chen
Binh Tinh Tran
Wong, Yuen Yee
Thanh Hoa Phan Van
Quang Ho Luc
Chiou, Diao Yuan
Chi Lang Nguyen
Dee, Chang Fu
Chang, Edward Yi
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-一月-2012
摘要: Growth conditions have investigated for growing high quality In0.3Ga0.7As and In0.5Ga0.5As on GaAs substrate by metalorganic chemical vapor deposition method. Annihilation reactions between threading dislocations observed by transmission electron microscopy are experimental evidences to confirm threading dislocations had been blocked in InxGa1-xAs buffer layers. A high quality smooth surface In0.5Ga0.5As epi-film with threading dislocation density of 2x10(6) cm(-2) was achieved at growth temperature of 490 degrees C. Metal-oxide-semiconductor capacitor devices fabricated on In0.5Ga0.5As/GaAs perform nice capacitance-voltage response, with small frequency dispersion. The conductance contours indicate that the Fermi level moves freely to the lower part of the InGaAs bandgap without pinning.
URI: http://hdl.handle.net/11536/150572
期刊: 2012 10TH IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)
起始頁: 246
結束頁: 248
顯示於類別:會議論文