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dc.contributor.authorChung, Steve S.en_US
dc.date.accessioned2019-04-02T06:04:37Z-
dc.date.available2019-04-02T06:04:37Z-
dc.date.issued2012-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150610-
dc.description.abstractThe random dopant fluctuation is one of the most important issues for sub-50nm CMOS technologies in terms of the device architecture and manufacturing. This paper will demonstrate the methodology to understand the dopant fluctuation via a purely experimental approach It will be demonstrated in advanced bulk-trigate devices. The discrete dopant distribution along the channel direction can be determined. Boron clustering effect in nMOSFETs can be reasonably explained which results in a larger Vth variation, in comparison to that of pMOSFETs. Moreover, experiments have been extended to the advanced bulk-trigate CMOS devices. The sidewall roughness effect in trigate has also been studied. This approach provides a direct-observation of the random dopant fluctuation (RDF) and is useful for the gate oxide quality monitoring of future generation trigate devices.en_US
dc.language.isoen_USen_US
dc.titleExperimental Observation on the Random Dopant Fluctuation of Small Scale Trigate CMOS Devicesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012)en_US
dc.citation.spage658en_US
dc.citation.epage660en_US
dc.contributor.department電子與資訊研究中心zh_TW
dc.contributor.departmentMicroelectronics and Information Systems Research Centeren_US
dc.identifier.wosnumberWOS:000319824700184en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper