標題: | Experimental Observation on the Random Dopant Fluctuation of Small Scale Trigate CMOS Devices |
作者: | Chung, Steve S. 電子與資訊研究中心 Microelectronics and Information Systems Research Center |
公開日期: | 1-一月-2012 |
摘要: | The random dopant fluctuation is one of the most important issues for sub-50nm CMOS technologies in terms of the device architecture and manufacturing. This paper will demonstrate the methodology to understand the dopant fluctuation via a purely experimental approach It will be demonstrated in advanced bulk-trigate devices. The discrete dopant distribution along the channel direction can be determined. Boron clustering effect in nMOSFETs can be reasonably explained which results in a larger Vth variation, in comparison to that of pMOSFETs. Moreover, experiments have been extended to the advanced bulk-trigate CMOS devices. The sidewall roughness effect in trigate has also been studied. This approach provides a direct-observation of the random dopant fluctuation (RDF) and is useful for the gate oxide quality monitoring of future generation trigate devices. |
URI: | http://hdl.handle.net/11536/23152 |
ISBN: | 978-1-4673-2475-5 |
ISSN: | |
期刊: | 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) |
Volume: | |
Issue: | |
起始頁: | 658 |
結束頁: | 660 |
顯示於類別: | 會議論文 |