標題: Experimental Observation on the Random Dopant Fluctuation of Small Scale Trigate CMOS Devices
作者: Chung, Steve S.
電子與資訊研究中心
Microelectronics and Information Systems Research Center
公開日期: 1-Jan-2012
摘要: The random dopant fluctuation is one of the most important issues for sub-50nm CMOS technologies in terms of the device architecture and manufacturing. This paper will demonstrate the methodology to understand the dopant fluctuation via a purely experimental approach It will be demonstrated in advanced bulk-trigate devices. The discrete dopant distribution along the channel direction can be determined. Boron clustering effect in nMOSFETs can be reasonably explained which results in a larger Vth variation, in comparison to that of pMOSFETs. Moreover, experiments have been extended to the advanced bulk-trigate CMOS devices. The sidewall roughness effect in trigate has also been studied. This approach provides a direct-observation of the random dopant fluctuation (RDF) and is useful for the gate oxide quality monitoring of future generation trigate devices.
URI: http://hdl.handle.net/11536/23152
ISBN: 978-1-4673-2475-5
ISSN: 
期刊: 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012)
Volume: 
Issue: 
起始頁: 658
結束頁: 660
Appears in Collections:Conferences Paper