完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chung, Steve S. | en_US |
dc.date.accessioned | 2019-04-02T06:04:37Z | - |
dc.date.available | 2019-04-02T06:04:37Z | - |
dc.date.issued | 2012-01-01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150610 | - |
dc.description.abstract | The random dopant fluctuation is one of the most important issues for sub-50nm CMOS technologies in terms of the device architecture and manufacturing. This paper will demonstrate the methodology to understand the dopant fluctuation via a purely experimental approach It will be demonstrated in advanced bulk-trigate devices. The discrete dopant distribution along the channel direction can be determined. Boron clustering effect in nMOSFETs can be reasonably explained which results in a larger Vth variation, in comparison to that of pMOSFETs. Moreover, experiments have been extended to the advanced bulk-trigate CMOS devices. The sidewall roughness effect in trigate has also been studied. This approach provides a direct-observation of the random dopant fluctuation (RDF) and is useful for the gate oxide quality monitoring of future generation trigate devices. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Experimental Observation on the Random Dopant Fluctuation of Small Scale Trigate CMOS Devices | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | en_US |
dc.citation.spage | 658 | en_US |
dc.citation.epage | 660 | en_US |
dc.contributor.department | 電子與資訊研究中心 | zh_TW |
dc.contributor.department | Microelectronics and Information Systems Research Center | en_US |
dc.identifier.wosnumber | WOS:000319824700184 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |