標題: SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION
作者: Chang, Kow-Ming
Chen, Chu-Feng
Lai, Chiung-Hui
Hsieh, Cheng-Ting
Wu, Chin-Ning
Wang, Yu-Bin
Liu, Chung-Hsien
Chang, Kuo Chin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SiGe-on-insulator;Biosensor;Passivation;Sensitivity
公開日期: 1-Jan-2012
摘要: The increase of surface to volume ratio results in the enhancement of the sensitivity of the nanowires. Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire improves the sensitivity of the nanowire biosensor as a result of carrier mobility enhancement in strain-Si. Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation has obtained a significant enhancement in hole mobility, further improving the sensitivity of SGOI nanowire. However, the sensitivity of SGOI nanowire was degraded for exceeding a Ge fraction of 20% (i.e., high Ge fraction), resulting from the unstable surface state. In this work, a top surface passivation SiO2 layer was deposited on Si0.8Ge0.2 nanowire and the sensitivity was about 1.3 times greater than nanowire sample without the top passivation layer.
URI: http://dx.doi.org/10.5220/0003875403840387
http://hdl.handle.net/11536/150612
DOI: 10.5220/0003875403840387
期刊: BIODEVICES: PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON BIOMEDICAL ELECTRONICS AND DEVICES
起始頁: 384
結束頁: 387
Appears in Collections:Conferences Paper