完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Chia-Yuan | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.contributor.author | Huang, Wei-Ching | en_US |
dc.contributor.author | Su, Yung-Hsuan | en_US |
dc.contributor.author | Trinh, Hai-Dang | en_US |
dc.contributor.author | Hsu, Heng-Tung | en_US |
dc.contributor.author | Miyamoto, Yasuyuki | en_US |
dc.date.accessioned | 2019-04-02T06:04:22Z | - |
dc.date.available | 2019-04-02T06:04:22Z | - |
dc.date.issued | 2009-01-01 | en_US |
dc.identifier.issn | 1938-5862 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/1.3206609 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150634 | - |
dc.description.abstract | The performance of n-type metal-oxide-semiconductor HEMTs with an InAs-channel using atomic-layer-deposited Al2O3 as gate dielectric has been fabricated and evaluated. The device performances of a set of scaled transistors with different gate dielectric thicknesses of 3, 5 and 7 nm have been investigated to determine whether the architecture of Al2O3 dielectric on InAs-channel HEMT can demonstrate good properties at low bias conditions for high-speed, high performance CMOS applications. The results indicate that the high-performance InAs-channel MOS-HEMTs with an ALD Al2O3 gate dielectric are promising candidates for advanced post-Si CMOS applications. | en_US |
dc.language.iso | en_US | en_US |
dc.title | InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.doi | 10.1149/1.3206609 | en_US |
dc.identifier.journal | PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7 | en_US |
dc.citation.volume | 25 | en_US |
dc.citation.spage | 87 | en_US |
dc.citation.epage | 92 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000338086300008 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |