標題: Growth Parameters Optimization of GaN High Electron Mobility Transistor Structure on Silicon Carbide Substrate
作者: Wong, Y. Y.
Huang, S. C.
Huang, W. C.
Lumbantoruan, F.
Chiu, Y. S.
Wang, H. C.
Yu, H. W.
Chang, E. Y.
台積電與交大聯合研發中心
TSMC/NCTU Joint Research Center
關鍵字: AlGaN/GaN;High electron mobility transistors;SiC
公開日期: 1-Jan-2014
摘要: High electron mobility transistors heterostructures of AlGaN/GaN were grown by metalorganic chemical vapor deposition system on silicon carbide substrate. The growth parameters such as AlN buffer thickness, AlN spacer growth time and Al content in AlGaN barrier layer were optimized. Moreover, the effects of chamber pressure and V/III ratio at the initial growth state of GaN on film crystal quality were also investigated. The optimized AlGaN/GaN heterostructure has AlN buffer thickness of 120 nm, AlN spacer growth time of 10 s and Al content of 28% in the barrier layer. Furthermore, as a result of using higher chamber pressure and lower V/III, both the GaN crystal quality and electron mobility in the AlGaN/GaN were also significantly improved. After the growth parameter optimization, the GaN (002) and (102) planes exhibited X-ray rocking curve widths of 209 arcsec and 273 arcsec, respectively. Besides, the AlGaN/GaN structure also has an electron mobility of 1832 cm(2)/V-s and a sheet electron density of 1.08 10(13) cm(-2), which yielding a sheet resistance of 316 Omega/sq.
URI: http://hdl.handle.net/11536/150641
期刊: 2014 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS (ICSE)
起始頁: 358
結束頁: 361
Appears in Collections:Conferences Paper