完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, Chia-Ningen_US
dc.contributor.authorChen, Yin-Nienen_US
dc.contributor.authorHuang, Po-Tsangen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorChuang, Ching-Teen_US
dc.date.accessioned2019-04-02T06:04:45Z-
dc.date.available2019-04-02T06:04:45Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn0271-4302en_US
dc.identifier.urihttp://hdl.handle.net/11536/150705-
dc.description.abstractThis paper investigates and evaluates analog and digital low-dropout linear voltage regulators (LDO) with FinFET, TFET and hybrid TFET-FinFET implementations. We utilize Sentaurus physics-based atomistic 3D TCAD mixed-mode simulations for device characteristics and HSPICE with look-up tables based on Verilog-A models calibrated with TCAD simulation results. Frequency response, load regulation and power supply rejection ratio (PSRR) are evaluated for analog LDOs under low, medium and high bias-current conditions. The results indicate that for analog implementations, TFET-LDO and hybrid-LDO provide better loop-gain and PSRR than FinFET-LDO under low and medium operating currents, whereas at higher operating current, FinFET implementation would outperform. As operating voltage is reduced, the performances of analog implementations degrade, and digital implementations become favorable for VIN below around 0.55V. We further show that for digital LDO, all FinFET implementation provides superior performance over all TFET and hybrid TFET-FinFET implementations.en_US
dc.language.isoen_USen_US
dc.subjectFinFETen_US
dc.subjectTunnel FET (TFET)en_US
dc.subjectLDOen_US
dc.subjectDigital Voltage Regulatoren_US
dc.titleExploration and Evaluation of Low-Dropout Linear Voltage Regulator with FinFET, TFET and Hybrid TFET-FinFET Implementations.en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)en_US
dc.citation.spage2849en_US
dc.citation.epage2852en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000439261800224en_US
dc.citation.woscount0en_US
顯示於類別:會議論文