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dc.contributor.authorHuang, Wei-Chengen_US
dc.contributor.authorSu, Pinen_US
dc.date.accessioned2019-04-02T06:04:21Z-
dc.date.available2019-04-02T06:04:21Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn1930-8868en_US
dc.identifier.urihttp://hdl.handle.net/11536/150743-
dc.description.abstractThis work proposes a new and simple hot-chuck measurement method for the extraction of the thermal resistance of FinFETs. The intrinsic transconductance that eliminates the parasitic source/drain resistance effect can serve as a temperature sensor to characterize the device temperature rise due to self-heating. Our method requires only DC measurements without the need of special test structures.en_US
dc.language.isoen_USen_US
dc.titleA New and Simple DC Method for Thermal-Resistance Extraction of Scaled FinFET Devicesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000444900700021en_US
dc.citation.woscount0en_US
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