A New and Simple DC Method for Thermal-Resistance Extraction of Scaled FinFET Devices

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, Wei-Cheng	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2019-04-02T06:04:21Z	-
dc.date.available	2019-04-02T06:04:21Z	-
dc.date.issued	2018-01-01	en_US
dc.identifier.issn	1930-8868	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150743	-
dc.description.abstract	This work proposes a new and simple hot-chuck measurement method for the extraction of the thermal resistance of FinFETs. The intrinsic transconductance that eliminates the parasitic source/drain resistance effect can serve as a temperature sensor to characterize the device temperature rise due to self-heating. Our method requires only DC measurements without the need of special test structures.	en_US
dc.language.iso	en_US	en_US
dc.title	A New and Simple DC Method for Thermal-Resistance Extraction of Scaled FinFET Devices	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2018 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000444900700021	en_US
dc.citation.woscount	0	en_US
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