SiOx/Si interfacial Si nano-pyramids enhancd electroluminescence from Si-rich SiOx MOSLED

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Gong-Ru	en_US
dc.contributor.author	Lin, Chi-Kuan	en_US
dc.date.accessioned	2019-04-02T06:04:41Z	-
dc.date.available	2019-04-02T06:04:41Z	-
dc.date.issued	2006-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150869	-
dc.description.abstract	Interfacial (100)-oriented Si nanopyramids are synthesized with surface density of 10(9) cm(-2) prior to the growth of Si-rich SiOx, which greatly suppresses blue-green EL and improve near-infrared EL at 30 nW with lifetime of > 10 hrs.	en_US
dc.language.iso	en_US	en_US
dc.subject	Si nano-pyramids	en_US
dc.subject	Electroluminescence	en_US
dc.subject	Si nanocrystals	en_US
dc.subject	Si-rich SiOx	en_US
dc.subject	diode	en_US
dc.title	SiOx/Si interfacial Si nano-pyramids enhancd electroluminescence from Si-rich SiOx MOSLED	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS	en_US
dc.citation.spage	107	en_US
dc.contributor.department	光電工程研究所	zh_TW
dc.contributor.department	Institute of EO Enginerring	en_US
dc.identifier.wosnumber	WOS:000244096100037	en_US
dc.citation.woscount	0	en_US
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