標題: | Enhancement of Fowler-Nordheim tunneling based light emission from metal-SiOx-Si MOSLED |
作者: | Lin, Gong-Ru Lin, Chun-Jung 光電工程學系 Department of Photonics |
關鍵字: | Fowler-Nordheim tunneling;Si-rich oxide;metal-SiOx-Si MOSLED;Si nanopyramids and nanocrystals |
公開日期: | 1-一月-2006 |
摘要: | PECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED. |
URI: | http://hdl.handle.net/11536/150880 |
期刊: | 2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS |
起始頁: | 219 |
顯示於類別: | 會議論文 |