標題: Enhancement of Fowler-Nordheim tunneling based light emission from metal-SiOx-Si MOSLED
作者: Lin, Gong-Ru
Lin, Chun-Jung
光電工程學系
Department of Photonics
關鍵字: Fowler-Nordheim tunneling;Si-rich oxide;metal-SiOx-Si MOSLED;Si nanopyramids and nanocrystals
公開日期: 1-Jan-2006
摘要: PECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED.
URI: http://hdl.handle.net/11536/150880
期刊: 2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS
起始頁: 219
Appears in Collections:Conferences Paper