| 標題: | Enhancement of Fowler-Nordheim tunneling based light emission from metal-SiOx-Si MOSLED |
| 作者: | Lin, Gong-Ru Lin, Chun-Jung 光電工程學系 Department of Photonics |
| 關鍵字: | Fowler-Nordheim tunneling;Si-rich oxide;metal-SiOx-Si MOSLED;Si nanopyramids and nanocrystals |
| 公開日期: | 1-Jan-2006 |
| 摘要: | PECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED. |
| URI: | http://hdl.handle.net/11536/150880 |
| 期刊: | 2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS |
| 起始頁: | 219 |
| Appears in Collections: | Conferences Paper |
- 富含奈米矽晶之過矽二氧化矽發光材料與元件 / 林俊榮;Chun-Jung Lin;林恭如;郭浩中;Gong-Ru Lin
- Enhancing nanocrystallite si electroluminescence by suppressing oxygen decomposition in high-temperature and low-plasma-power PECVD / Lin, Chun-Jung;Lin, Gong-Ru
- SiOx/Si interfacial Si nano-pyramids enhancd electroluminescence from Si-rich SiOx MOSLED / Lin, Gong-Ru;Lin, Chi-Kuan
- Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2 / Lin, GR;Lin, CJ;Lin, CK;Chou, LJ;Chueh, YL
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