標題: Enhancing Performance in Thin Tilm Transistors with Vacuum or Solution Processed Amorphous Oxide Semiconductors Towards Display Applications
作者: Chen, Changdong
Li, Gongtan
Li, MinMin
Yang, Bo-Ru
Liu, Chuan
Lee, Chia-Yu
Wu, Yuan-Chun
Lu, Po-Yen
Shieh, Han-Ping D.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Amorphous oxide semiconductor;bias stability;hybrid inverter;additive patterning;solution based
公開日期: 1-一月-2018
摘要: To simultaneously achieve high mobility and good reliability of thin-film transistors (TFTs), we controlled oxygen vacancies via nitrogen incorporation in InGaZnO TFTs from vacuum-or solution-based methods. For display applications, IGZO and crystalline silicon TFTs were integrated together to build hybrid CMOS. Also, additive patterning method is developed for solution-processed oxide semiconductors, based on which wafer-scale TFT arrays and NMOS have been demonstrated.
URI: http://hdl.handle.net/11536/150965
ISSN: 2373-5422
期刊: 2018 IEEE INTERNATIONAL CONFERENCE ON MANIPULATION, MANUFACTURING AND MEASUREMENT ON THE NANOSCALE (3M-NANO) - CONFERENCE PROCEEDINGS
起始頁: 237
結束頁: 240
顯示於類別:會議論文