標題: High Performance Amorphous In-W-Zn-O Thin Film Transistor with Ultra-Thin Active Channel for Low Voltage Operation
作者: Liu, Po-Tsun
Kuo, Po-Yi
Hsu, Shan-Ming
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
公開日期: 1-Jan-2018
摘要: Amorphous indium tungsten zinc oxide (a-IWZO) ultra-thin film TFTs (UTFTs) have been successfully fabricated and demonstrated in this work. Tungsten oxide (WO3)-doped indium zinc oxide was developed because WO3 doping can form stable semiconducting films with various carrier mobilities and carrier concentration. The novel IWZO UTFTs with high-kappa HfO2 gate insulator exhibit superior potential for the power-saving applications of flat panel displays (FPDs), flexible electronics, and large scale integration (LSI) technologies owing to its outstanding characteristics of low threshold voltage similar to -0.072 V, high field-effect mobility (mu(FE)) similar to 23.8 cm(2)/V-s, excellent subthreshold swing similar to 72.6 mV/dec., low voltage operation (low power consumption), high electrical reliability, and small hysteresis.
URI: http://dx.doi.org/10.1149/08611.0091ecst
http://hdl.handle.net/11536/150988
ISSN: 1938-5862
DOI: 10.1149/08611.0091ecst
期刊: THIN FILM TRANSISTOR TECHNOLOGIES 14 (TFTT 14)
Volume: 86
起始頁: 91
結束頁: 93
Appears in Collections:Conferences Paper