High Performance Amorphous In-W-Zn-O Thin Film Transistor with Ultra-Thin Active Channel for Low Voltage Operation

Abstract

Amorphous indium tungsten zinc oxide (a-IWZO) ultra-thin film TFTs (UTFTs) have been successfully fabricated and demonstrated in this work. Tungsten oxide (WO3)-doped indium zinc oxide was developed because WO3 doping can form stable semiconducting films with various carrier mobilities and carrier concentration. The novel IWZO UTFTs with high-kappa HfO2 gate insulator exhibit superior potential for the power-saving applications of flat panel displays (FPDs), flexible electronics, and large scale integration (LSI) technologies owing to its outstanding characteristics of low threshold voltage similar to -0.072 V, high field-effect mobility (mu(FE)) similar to 23.8 cm(2)/V-s, excellent subthreshold swing similar to 72.6 mV/dec., low voltage operation (low power consumption), high electrical reliability, and small hysteresis.