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dc.contributor.authorSyu, Jin-Siangen_US
dc.contributor.authorMeng, Chinchunen_US
dc.contributor.authorYang, Chunen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2019-04-02T06:04:29Z-
dc.date.available2019-04-02T06:04:29Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2164-2958en_US
dc.identifier.urihttp://hdl.handle.net/11536/151029-
dc.description.abstractA 2-GHz single-voltage-supply 0.15-mu m depletion-mode (D-mode) pseudomorphic high electron-mobility transistor (pHEMT) low-noise amplifier (LNA) is demonstrated with a proposed process-independent self-biasing scheme. The current-reused technique is also employed to achieve a common-source common-drain two-stage LNA under a dc current of 10.85 mA at a 3-V supply. As a result, the proposed LNA achieves 20-dB power gain and 1.35-dB noise figure (NF) at 2 GHz while the minimum NF=1.3 dB occurs at 2.4 GHz.en_US
dc.language.isoen_USen_US
dc.subjectLow-noise amplifier (LNA)en_US
dc.subjectsingle-voltage-supplyen_US
dc.subjectcurrent-reuseen_US
dc.subjectpseudomorphic high electron-mobility transistor (pHEMT)en_US
dc.title2-GHz 1.35-dB NF pHEMT Single-Voltage-Supply Process-Independent Low-Noise Amplifieren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 IEEE RADIO & WIRELESS SYMPOSIUM (RWS)en_US
dc.citation.spage84en_US
dc.citation.epage87en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000458443000023en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper