| 標題: | Interfacial Layer Engineering for Ge MOSFET by Metal Element Doping and Characterization of Interface Density |
| 作者: | Chien, Chao-Hsin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1-一月-2018 |
| URI: | http://hdl.handle.net/11536/151068 |
| 期刊: | 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) |
| 起始頁: | 101 |
| 結束頁: | 101 |
| 顯示於類別： | 會議論文 |
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